Etching of xerogel in high-density fluorocarbon plasmas
نویسندگان
چکیده
s of the 44th National Symposium of the American Vacuum Society, San Jose, CA, 20–24 Oct. 1997, p. 215. S.-J. Wang, I.-S. Jin, and H.-H. Park, Surf. Coat. Technol. 100–101, 59 ~1998!. M. Schaepkens, N. R. Rueger, J. J. Beulens, X. Li, T. E. F. M. Standaert, P. J. Matsuo, and G. S. Oehrlein, J. Vac. Sci. Technol. A 17, 3272 ~1999!. H.-H. Park, M.-H. Jo, H.-R. Kim, and S.-H. Hyon, J. Mater. Sci. Lett. 17,
منابع مشابه
Gas-phase studies in inductively coupled fluorocarbon plasmas
Quantitative results from infrared laser absorption spectroscopy ~IRLAS! of CF and CF2 radicals and COF2 products in inductively coupled plasmas fed with C2F6, CHF3 and C4F8 are presented and compared with results simultaneously obtained by mass spectrometry and optical emission spectroscopy. These plasma gas-phase analysis results are discussed and compared to fluorocarbon deposition and etchi...
متن کاملEffect of capacitive coupling on inductively coupled fluorocarbon plasma processing
This article describes results obtained using various plasma and surface diagnostics in a study of inductively coupled fluorocarbon plasmas in which the amount of capacitive coupling was systematically varied. It is found that the plasma density decreases while the electron temperature increases as the amount of capacitive coupling is increased at a constant source power level. The rate at whic...
متن کاملSelective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates
In the fabrication of microstructures in SiO2 , etch selectivity of SiO2 to masking, etch stop, and underlayer materials need to be maintained at corners and inclined surfaces. The angular dependence of the SiO2-to-Si3N4 etch selectivity mechanism in a high density fluorocarbon plasma has been studied using V-groove structures. The SiO2 etch rate on 54.7° inclined surfaces is lower than on flat...
متن کاملStudy of C4F8 ÕN2 and C4F8 ÕArÕN2 plasmas for highly selective organosilicate glass etching over Si3N4 and SiC
We report the effect of N2 addition to C4F8 and C4F8 /Ar discharges on plasma etching rates of organosilicate glass ~OSG! and etch stop layer materials (Si3N4 and SiC!, and the results of surface chemistry studies performed in parallel. N2 addition exhibits different effects in C4F8 and C4F8 /Ar plasmas, which may be explained by a higher plasma density, electron temperature, and possibly, the ...
متن کاملRole of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
The etching of Si, SiO2 , Si3N4 , and SiCH in fluorocarbon plasmas is accompanied by the formation of a thin steady-state fluorocarbon film at the substrate surface. The thickness of this film and the substrate etch rate have often been related. In the present work, this film has been characterized for a wide range of processing conditions in a high-density plasma reactor. It was found that the...
متن کامل